The hybrid SET developed at INRiM is composed of Cu/AlOx/Al: we are confident to be able to overcome some limitations of traditional Al/AlOx/Al devices. The brighter areas (Cu) are the source and drain contacts., and the gate contact coupled with the island (dark, horizontal area).
The tunnel junctions corresponds with the overlap areas between the source-drain and the island. The device has been realized by Electron Beam Lithography using a double resist layer, and double angle evaporation.
|Realizzato con||::: da Otto srl|